Abstract
Theoretical calculations of electron mobility in p-type GaAs were carried out taking into consideration the screening effects and all major scattering processes. Calculated values of mobility are presented as a function of carrier concentration, compensation ratio, and temperature. The basic differences between minority-carrier mobility in p-type GaAs and electron mobility in n-type GaAs are pointed out. A practical procedure is also presented for the evaluation of minority-carrier mobility from available electron-mobility data.
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