Minority carrier lifetimes in digitally-grown, narrow-gap, AlInAsSb alloys

Abstract

The minority carrier lifetime in extended-short-wavelength infrared and mid-wavelength infrared digitally-grown AlInAsSb alloys has been measured by time-resolved photoluminescence, ranging from 26 to 260 ns depending on temperature and composition. The temperature dependence of the minority carrier lifetime and the power-dependence of continuous-wave photoluminescence indicate the presence of at least two deleterious Shockley–Read–Hall recombination centers, limiting the minority carrier lifetime of AlInAsSb alloys, particularly with non-zero Al concentration.