Abstract

The minority carrier lifetime and diffusion length in partially strain-compensated Si 1− x− y Ge x C y ternary alloys or tensilely strained Si 1− y C y layers have been measured by using capacitance–time ( C– t) transient technique. The substrate doping ( N B) of molecular beam epitaxy (MBE) grown Si 0.835Ge 0.15C 0.015 films and solid phase epitaxial Si 0.99C 0.01 films was found to be approximately 1×10 17 cm −3 which has been extracted from high frequency capacitance–voltage ( C HF– V G) characteristics of MIS capacitors fabricated using SiO 2 and ZrO 2 films on Si 0.99C 0.01 and Si 0.835Ge 0.15C 0.015, respectively. Minority carrier lifetimes of Si 0.835Ge 0.15C 0.015 and Si 0.99C 0.01 films are found to be 2.4×10 −6 and 9.2×10 −9 s, respectively. The average values of the diffusion length were found to be 27 and 3 μm for Si 0.835Ge 0.15C 0.015 and Si 0.99C 0.01 films, respectively.

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