Minority Carrier Distribution in the Base Region of a pn Junction Silicon Solar Cell and its Contribution to the Spectral Response

Abstract

Analytical and experimental research work has been previously by various researchers on silicon solar cells. In this paper, an analytical study has been carried out on the light generated excess minority carrier distribution and photocurrent in the base region of a p + n junction solar cell. The effect of back surface recombination velocity, doping and absorption coefficient on the minority carrier distribution in the n type base layer have been observed and the spectral response component due to this region has been obtained. The minority carrier profile helps in understanding the physics of the solar cells.