Abstract
Minority carrier hole diffusion lengths in as-grown and Ni- or Cu-diffused bulkn-GaAs, both LEC and HB, having carrier concentrations in the range 1016-1017cm−3 have been studied by surface photovoltage methods and trap concentrations determined by DLTS measurements. Data are available for a wide range of specimens and therefore a method of correlation ofLp with electron trap concentrations has been developed that allows easy identification of the dominant recombination center. This is determined to be the level at aboutEc-0.40 eV, termed EL5 in earlier studies of electron traps.
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