Abstract
Electron and hole transport in compensated InGaAsN (≈2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (≫ mean free path) material inhomogeneities, not a random alloy-induced mobility edge.
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