Abstract
In a monolithic perovskite/c-Si tandem device, the perovskite top cell has to be deposited onto a flat c-Si bottom cell without anti-reflective front side texture, to avoid fabrication issues. We use optical simulations to analyze the reflection losses that this induces. We then systematically minimize these losses by introducing surface textures in combination with a so-called burial layer to keep the perovskite top cell flat. Optical simulations show that, even with a flat top cell, the monolithic perovskite/c-Si tandem device can reach a matched photocurrent density as high as 19.57 mA/cm2.
Highlights
With a record efficiency of more than 25% [1], crystalline silicon (c-Si) solar cells have nearly reached their practical efficiency limit
In a monolithic perovskite/c-Si tandem device, the perovskite top cell has to be deposited onto a flat c-Si bottom cell without anti-reflective front side texture, to avoid fabrication issues
We use optical simulations to analyze the reflection losses that this induces. We systematically minimize these losses by introducing surface textures in combination with a so-called burial layer to keep the perovskite top cell flat
Summary
With a record efficiency of more than 25% [1], crystalline silicon (c-Si) solar cells have nearly reached their practical efficiency limit. Because c-Si and perovskite have different bandgaps, 1.1 eV and 1.6 eV respectively, a tandem device with a perovskite top cell and a c-Si bottom cell, has an efficiency potential of more than 30% [2]. Because the integration of a perovskite top cell and a c-Si bottom cell is not trivial, a perovskite/c-Si tandem device with an efficiency exceeding the c-Si solar cell record efficiency has so far not been demonstrated experimentally. The top and bottom cells are coupled optically, but not connected electrically Because both cells each have their own external contacts this results in a four-terminal tandem device. The perovskite top cell can be deposited back-to-front, directly on top of the c-Si bottom cell This creates a monolithic perovskite/c-Si tandem device of which the top and bottom cell are electrically connected in series. The highest efficiency far demonstrated by this type of monolithic tandem device is 21.2% [4]
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