Abstract
We report a method for minimization of the surface leakage current and reduction of the time-dependent degradation of (Cd,Mn)Te, a material under consideration for semiconductor X-ray and Gamma-ray detector applications. Preliminary characterization of the resistivity of the plates was achieved by use of an EU-ρ-μτ-SCAN. For semi-insulating samples the resistivity was in the range 108–109 Ω-cm. Electrical contacts were made on the lower and upper surfaces of each sample. After protection of the contacts, lateral surfaces were subjected to reaction with a variety of chemical substances. Subsequent chemical treatments of (Cd,Mn)Te single crystal platelets were studied to optimize passivation of the inter-electrode surfaces. The control voltage–current (I–V) characteristics were measured repeatedly at hourly and daily intervals. It was found that chemical etching in 10%Br-MeOH, then 1%Br-MeOH, and finally passivating the surfaces of the crystals with (NH4)2S reduces the surface leakage current.
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