Abstract
AbstractLocalized substrate integrated artificial dielectric (L‐SIAD) is a structure with only metallic posts right under microstrip line, leading to planar microstrip circuit miniaturization.When compared with original substrate integrated artificial dielectric (SIAD), the fabrication for L‐SIAD will be more economical and easier, whereas the characteristics of L‐SIAD is almost the same as that of original SIAD. A microstrip dual‐band power divider on L‐SIAD exhibits an area reduction of about 40% compared with that on regular substrate. By proper design of L‐SIAD, more area reduction can be achieved. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 644–648, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24997
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