Miniaturized DC–60 GHz RF PCM GeTe-Based Monolithically Integrated Redundancy Switch Matrix Using T-Type Switching Unit Cells

Abstract

This article presents an approach to monolithically implement radio-frequency (RF) phase change material (PCM) germanium telluride (GeTe) T-type switch as a switching unit cell for millimeter-wave (mmWave) redundancy switch matrix applications. The miniature T-type switch demonstrates three states of operation, including one crossover state and two turn states. A seven-layer microfabrication process, including an additional conductive layer to reduce the $RC$ time constant due to the bias network routing, is developed and optimized to fabricate the multiport RF devices. A $4 \times 6$ PCM-based redundancy switch matrix is developed by monolithically integrating four T-type switches in the cascade configuration. Thermal crosstalk in PCM switches is experimentally investigated using submicrometer spatial resolution transient thermal imaging. The presented T-type switch has the device periphery of 0.55 mm $\times \,\,0.55$ mm, while the overall integrated PCM redundancy switch matrix is fabricated with a device footprint of 0.88 mm $\times \,\,1.1$ mm. The measured results of the T-type switches demonstrate an excellent RF performance with lower than 1.6 dB insertion loss, better than 20 dB return loss, and higher than 20 dB isolation in all states from dc–67 GHz. The redundancy switch matrix exhibits an insertion loss less than 3 dB, return loss better than 14 dB, and isolation higher than 20 dB from dc–60 GHz. To the best of our knowledge, this is the first implementation of a PCM-based redundancy switch matrix.