Abstract
This review provides an overview of the technological advancements and miniaturization trends in Substrate Integrated Waveguide (SIW) filters. SIW is an emerging planar waveguide structure for the transmission of electromagnetic (EM) waves. SIW structure consists of two parallel copper plates which are connected by a series of vias or continuous perfect electric conductor (PEC) channels. SIW is a suitable choice for designing and developing the microwave and millimetre-wave (mm-Wave) radio frequency (RF) components: because it has compact dimensions, low insertion loss, high-quality factor (QF), and can easily integrate with planar RF components. SIW technology enjoys the advantages of the classical bulky waveguides in a planar structure; thus is a promising choice for microwave and mm-Wave RF components.
Highlights
radio frequency (RF) communication components have gained tremendous attention in recent times
DESIGN GUIDELINES OF Substrate Integrated Waveguide (SIW) STRUCTURES As discussed in the beginning that SIW is an advanced form of a classical waveguide that can be integrated with a planar dielectric substrate, such as printed circuit board (PCB)
A more accurate calculation of dispersion characteristics and field properties can be performed with the help of electromagnetic (EM) wave simulator such as High-Frequency Structure Simulator (HFSS) and CST Microwave Studio
Summary
RF communication components have gained tremendous attention in recent times. Technology is getting advanced with time and new applications are suggested, explored and successfully deployed. Substrate Integrated Waveguide (SIW) technology is considered as one of the suitable choices for developing RF components [12]–[16]. DESIGN GUIDELINES OF SIW STRUCTURES As discussed in the beginning that SIW is an advanced form of a classical waveguide that can be integrated with a planar dielectric substrate, such as PCB. This emerging SIW structure can be designed with a dielectric material, two parallel metal plates, and a series of vias. If the gap between the two adjacent vias (p) is increased, the majority of the EM fields will no longer remain inside the SIW cavity resonator As as result, they will propagate through vias and will cause leakage losses. Figure. 3 shows the region of interest of the SIW as a function of d/λc and p/λc [16]
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