Miniaturization of mid-IR sensors on Si: challenges and perspectives

Abstract

The Mid-IR spectral range (2.5 μm up to 12 μm) has been considered as the paradigm for innovative silicon photonic devices. In less than a decade, chemical sensing has become a key application for Mid-IR silicon photonic devices because of the growing potential in spectroscopy, materials processing, chemical and biomolecular sensing, security and industry applications. Measuring in this spectral range, usually called molecule fingerprint region, allows to address a unique combination of fundamental absorption bands orders of magnitude stronger than overtone and combination bands in the near IR. This feature provides highly selective, sensitive and unequivocal identification of the chemicals. Progress in Cascade Laser technology (QCL and ICL) allows to select emission wavelengths suitable to target the detection of specific chemicals. With these sources, novel spectroscopic tools allowing real-time in-situ detection of gasses down to traces are nowadays commercially available. Mid-IR Si photonics has developed a novel class of integrated components leading to the integration at chip level of the main building blocks required for chemical sensing, i.e. the source, the PICs and the detector. Three main directions of improvement can be drawn: i) extend the range of wavelengths available from a single source, ii) move beam handling and routing from discrete optics to PICs and iii) investigate detection schemes for a fully integrated on-chip sensing. This paper reviews recent key achievements in the miniaturization and the co-integration of photonics devices at chip and packaging level to address cost, size and power consumption. Perspectives on potential applications will also be presented.