Abstract

The project of a miniaturized vacuum microelectronic 100 GHz switch is described. It implies the development of a field emission electron gun as well as the investigation of miniaturized lenses and deflectors. Electrostatic elements are designed and developed for this application. Connector pads and wiring pattern are created by conventional electron beam lithography and a lift-off or etching process. Wire and other 3-dimensional structures are grown using electron beam induced deposition. This additive lithography allows to form electrodes and resistors of a preset conductivity. The scanning electron microscope features positioning the structures with nm precision. An unconventional lithography system is used that is capable of controlling the pixel dwell time within a shape with different time functions. With this special function 3-dimensional structures can be generated like free standing square shaped electrodes. The switch is built by computer controlled additive lithography avoiding assembly from parts. Lenses of micrometer dimensions were investigated with numerical electron optics programs computing the 3-dimensional potential and field distribution. From the extracted axial field distribution the electron optic characteristic parameters, like focal length, chromatic and spherical aberration, were calculated for various lens excitations. The analysis reveals that miniaturized optics for low energy electrons, as low as 30 eV, are diffraction limited. For a lens with 2 μm focal length, a chromatic aberration disc of 1 nm contributes to 12 nm diffraction disc. The spherical aberration blurs the probe by 0.02 nm, assuming an aperture of 0.01 rad. Employing hydrogen ions at 100 V, a probe diameter of 0.3 nm generated by chromatic aberration is possible. Miniaturized electron optical probe forming systems and imaging systems can be constructed with those lenses. Its application as lithography systems with massive parallel beams can be forseen.

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