Abstract
The effects of milling process on the microstructure and microwave properties of Ba 2Ti 9O 20 materials were systematically investigated by the evanescent microwave probe (EMP) technique. It was found that although the reaction kinetics of Ba 2Ti 9O 20 materials was markedly enhanced by the high-energy-milling (HeM) process, the quality factor of the materials decreases with the duration in HeM process. SiO 2-contamination due to the HeM milling process (with Si 3N 4 media) is presumed to be the main cause. In this study, SiO 2-doped Ba 2Ti 9O 20 sample was adopted to enhance and trace the SiO 2 effect during HeM process. The EMP investigation on the microwave dielectric properties of the local region for the Ba 2Ti 9O 20 samples indicates that lossy Si/Ti-containing phases were expelled by the Ba 2Ti 9O 20 grains, which is especially obvious in the as-sintered sample surface. Si-contamination induced the abnormal grain growth phenomenon, which, in turn, degrades the microwave dielectric quality factor of the Ba 2Ti 9O 20 materials.
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