Abstract
Conventional Ge:Ga photoconductors presents a residual responsivity at millimetric wavelengths, well below the cut-off wavelength due to the gallium impurity ionization energy. At constant bias voltage, this millimetric responsivity is greatly enhanced when a strong uniaxial stress is applied. We suggest that this response is mainly due to a change in the free hole lifetime when the hole gas is heated by the absorbed microwave photons. This photoconductive process has a shorter response time than the InSb Putley mechanism. Thus optimization of this millimetric Ge:Ga detector could find an application for example for heterodyne detection with larger spectral width than InSb.
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