Abstract

Zero-bias detectors based on low-barrier Schottky diodes and planar slot antennas are investigated at 94 GHz. Diodes with differential contact resistances <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R<sub>j</sub> </i> =1+1000 kOmega at zero bias are used. The better voltage responsivity - more than 10000 V/W - is obtained at <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R<sub>j</sub> </i> =20+100 kOmega. At lower values of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R<sub>j</sub> </i> =2+6 kOmega a better noise equivalent power NEPap10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> WmiddotHz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1/2</sup> , is observed. Experimental data are compared with the simulation in a simple model of detector.

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