Millimeter-scale self-collimation in planar photonic crystals fabricated by CMOS technology

Abstract

We report self-collimating demonstration in planar photonic crystals (PhCs) fabricated in silicon-on-insulator (SOI) wafers using 0.18 μm silicon complementary metal oxide semiconductor (CMOS) techniques. This process is original in the context of self-collimating PhC. Emphasis was on demonstrating self-collimation effect through the use of standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhC were designed on 230 nm-top-Si layer using a square lattice of air-holes with 270 nm in diameter. The lattice constant of the PhC was 380 nm. The 1 mm self-collimation was observed at the wavelengths of 1620 nm.