Abstract
Two planar indium phosphide Schottky diode designs have been fabricated and analyzed for millimeter-wave detector applications up to 150 GHz. Device structure and fabrication are discussed, and small-signal equivalent circuit models are presented. The following topics are included: the planar InP diode structure fabricated by megaelectron volt ion implantation. DC and RF measurements, circuit model values, and 94-GHz small-signal detector performance. The zero-bias detector sensitivity at 94 GHz was measured to be as high as 400 mV/mW, and the calculated tangential signal sensitivity was -56 dBm. >
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Schedule a callMore From: IEEE transactions on microwave theory and techniques
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