Abstract
SUMMARY Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/ mm and high breakdown voltage of 73V. A cut-off frequency fT of 113GHz and maximum oscillation frequency fmax of 230GHz were achieved. The output power density reached 1 W/ mm with a linear gain of 6.4dB at load-pull measurements at 90GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/ GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.
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