Abstract
SrBi2Ta2O9 (SBT) films were prepared on Pt/Ti/SiO2/Si substrates by the sol–gel method, and they were annealed by 28 GHz millimeter-wave (mm-wave) irradiation and electric furnace heating. The mm-wave absorption measurement for each component of the substrate materials and the film indicated a selective heating of the film by the mm-wave. Films annealed with mm-waves had larger grains and smaller amounts of non-ferroelectric pyrochlore than those annealed using an electric furnace. These differences brought about a higher remanent polarization for the mm-wave-annealed films. Leakage current, fatigue and retention properties of films treated by the two methods were comparable.
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