MILC-TFT With High-$\kappa$ Dielectrics for One-Time-Programmable Memory Application

Abstract

In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ~ -0.78 V, excellent subthreshold swing ~ 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.