Abstract
(GaAs)1−x(Si2)x/GaAs strained-layer superlattices (SLS) have been used as buffer layers to reduce the dislocation density in GaAs grown on Si by migration-enhanced epitaxy. The cross-sectional transmission electron microscopy (TEM) investigations revealed extensive threading dislocation bending at each interface of (GaAs)1−x(Si2)x and GaAs, making the SLS highly efficient. The observed highly effective dislocation bending, it is believed that due to a combined effect of built-in strain in the SLS and the relatively high elastic stiffness constant of (GaAs)1−x(Si2)x alloys. Plan-view TEM studies indicated dislocation densities <106 cm−2 at a distance of 0.2 μm from the surface of GaAs on Si.
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