Abstract
The aim of all X-ray topographic methods is to provide a picture of the distribution of the defects in a crystal. By using Si(220) monochrometor irradiated by an incident beam of 3mm×0.1mm, the effect of annealing on texture of3He at about 0.3mK and of4He at about 0.5mK by the fixed point observation were taken on every three hours by emulsion plate, together with the diffraction patterns by scanning the incident beam over some extent near the vicinity of the fixed point. Annealing effect could not be observed in4He but it was very conspicuous in3He.
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