Abstract
Rapid migration of the gold electrode on C–SiOx–Au devices has been found for temperatures above the Au/Si eutectic point. Approximate concentration profiles have been determined by means of Rutherford scattering. Electrical measurements have been performed on both virgin and diffused devices. Comment is made on the relevance of electrode migration to the forming process and bistable memory switching in metal-insulator-metal devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
