Abstract
We have studied conditions for the synthesis of nanodimensional silicon islands (quantum dots) in a microwave low-pressure gas discharge plasma on noncrystalline substrates with a weak interaction at the deposit-substrate interface. It is established that the formation of nanoislands proceeds via the leveling (healing) of depressions on the substrate surface. A mechanism of the influence of the parameters of deposition on the kinetics of formation of nanoislands is proposed.
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