Abstract

With the advancement in technology, the need for high efficient, switching speed and compact size of converters are gaining popularity. These converters require power devices having high breakdown voltage, thermal conductivity, switching frequency and operating temperature. Silicon devices exhibit limitations in switching frequency and operation at high temperature. The limitations of Si devices lead to advancements of wide band gap devices. The superior electrical properties of WBG devices make them potential candidates for use in high temperature, voltage and switching speed converter applications. Among the many WBG devices, silicon carbide, diamond and gallium nitride are a promising candidates. This paper deals with comparisons between conventional Si and GaN devices and highlights overall state of the art and future trends of GaN devices.

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