Abstract
00 00 Introduction 1. Point defects: equilibrium configuration and diffusivity 1"1. Native point defects 1"2. Experiments to evaluate the point defect diffusivity 1"2.1. Vacancy migration 1"2.2. Interstitial migration 1"3. Stress field and point defects 1"4. Molecular dynamics simulation of point defects 2. New experimental evaluations of point defects diffusivity at room temperature 2"1. Point defect migration at room temperature 2"2. Novel method for measuring defect concentration profiles 2"2.1. Defect concentration profiles generated by MeV He implants 2"2.2. Interstitial and vacancy-type defects: comparison of He implants in nand p-type Si 2"3. Point-defect-complex-defect interaction 3. Applications 4. Conclusion
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