Abstract
Post-implantation annealing of sapphire implanted with transition metal (Fe and Cu) ions was carried out and the behavior of implanted metal ions was investigated. The final size of the precipitates, the migration behavior and the chemical form of final products strongly depended on the oxidizability of implanted ion species. In the iron-implanted specimens, a surface deposit grew, and the size of metallic precipitates inside the sample increased for short annealing time and then decreased. In the copper-implanted specimen, on the other hand, no products were observed on the surface and the size of metallic precipitates increased. The diffusion of metal atoms toward the surface was quite faster than that toward the inside due to the large diffusion coefficient in the amorphous area with radiation damage.
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