Abstract
InAs-GaSb strain layer superlattice p+-n--n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature-dependent measurements were performed on 300 times 300 mum2 mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche mechanism.
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