Abstract

Long wavelength (2-6 {micro}m) diode emitters are desirable for many applications including monitoring of chemical species in the environment and manufacturing, long wavelength fiber-optic communications, lidar, and JR detector counter-measures. No practical diode lasers are available for any of these applications because the band structure of bulk III-V, II-VI, and IV-VI semiconductor alloys results in large Auger recombination rates at these wavelengths. Experimental and theoretical work at Sandia has resulted in new understanding of the electronic properties of narrow bandgap III-V heterostructures, and we have found methods of reducing the Auger rates in certain InAsSb superlattices and quantum wells. These devices enable us to begin chemical sensing demonstrations of important species such as CO-CO{sub 2} and numerous other compounds. This project will involve developing chemical sensing systems and determining the sensitivity and limitations of these systems. Concurrently, we will improve upon infrared emitters used in these systems.

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