Abstract
This paper provides an investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC wafer to improve the manufacturability and high-temperature performance of SiC using laser applications. 266nm pulsed laser micromachining of SiC was investigated. The purpose is to establish suitable laser parametric regime for the fabrication of high accuracy, high spatial resolution and thin diaphragms for high-temperature MEMS pressure sensor applications. Etch rate, ablation threshold and quality of micromachined features were evaluated. The governing ablation mechanisms, such as thermal vaporization, phase explosion, and photomechanical fragmentation, were correlated with the effects of pulse energy. The ablation threshold is obtained with ultraviolet pulsed laser ablation. The results suggested ultraviolet pulsed laser’s potential for rapid manufacturing. Excellent quality of machined features with little collateral thermal damage was obtained in the lower pulse energy range. The leading material removal mechanisms under these conditions were discussed.
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