Abstract
In this paper, a mid-/long-wave dual-band detector with N-M-π-B-π-N sturcture was developed based on type-II InAs/GaSb superlattice was fabricated by adopting the dual-band structure. The dual-band detector epi-layer presented high crystalline quality of epi-layers. The two channels, with respective 50% cut-off wavelength at 3.5 μm and 11.8 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band were 22% at 2.7 μm under no bias voltage and 23% at 9.1 μm under -180 mV, respectively. The resistance under 0 and -180 mV of applied bias were 1.7×104 Ω·cm2 and 97 Ω·cm2. Due to the high resistance of long wavelength infrared channel, the specific detectivity of LWIR band maintains above 1011 cm·Hz1/2/W from 4.5 μm to 12.6 μm under - 180 mV at 77K. Finally, the thermal images of both channel were taken by the fabricated FPA.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
