Abstract
Intersublevel second-order nonlinear susceptibility is investigated in InAs/GaAs self-assembled quantum dots. It is shown that the nonlinear susceptibility associated with intersublevel transitions in the conduction band or in the valence band can be greatly enhanced by up to six orders of magnitude as compared to the susceptibility of bulk GaAs. This enhancement results from the nanometer scale of the intersublevel dipoles and from the achievement of resonance conditions between the pump and harmonic waves and the involved intersublevel transitions. Experimentally, second-harmonic generation is observed in the valence band of the dots. A double resonance condition fulfilled at 168 meV leads to an enhancement of three orders of magnitude of X zxx (2) as compared to the susceptibility of bulk GaAs.
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