Abstract
We have developed a midinfrared optical upconverter by wafer bonding a GaAs∕AlGaAs light-emitting diode with an InSb p+nn+ photodetector. The device converts midinfrared radiation in the range of 3–5.45μm to near-infrared light at 0.84μm, which can be efficiently detected using a widely available Si charge coupled device. At 77K, the measured external upconversion efficiency was 0.093W∕W. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
