Abstract

Midinfrared absorption can be locally measured using a detection combining an atomic force microscope and a pulsed excitation. This is illustrated for the midinfrared bulk GaAs phonon absorption and for the midinfrared absorption of thin SiO(2) microdisks. We show that the signal given by the cantilever oscillation amplitude of the atomic force microscope follows the spectral dependence of the bulk material absorption. The absorption spatial resolution achieved with microdisks is around 50 nanometer for an optical excitation around 22 micrometer wavelength.

Highlights

  • The local measurement of midinfrared absorption with a nanometer scale resolution is a challenging issue

  • We show that the signal given by the cantilever oscillation amplitude of the atomic force microscope follows the spectral dependence of the bulk material absorption

  • We show that the oscillation amplitude of the atomic force microscope cantilever is directly correlated to the spectral dependence of the absorption

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Summary

Introduction

The local measurement of midinfrared absorption with a nanometer scale resolution is a challenging issue. Apertureless scattering scanning near-field microscopy has been demonstrated on various type of samples using an optical excitation delivered by a CO2 laser around 10.6 μm.[1, 2] The apertureless near-field microscope is based on the scattering of the electromagnetic field induced by the tip of an atomic force microscope (AFM) in tapping mode This scattering is dependent on the local value of the complex dielectric function. This technique was recently extended to far-infrared using free-electron laser pulses to image ferroelectric domains.[3] Midinfrared absorption can be measured using an atomic force microscope tip in contact mode as a sensor. A qualitative framework based on percutionnal mechanical excitation is proposed as a base for the discussion of the observed signal features

Samples
Spectral dependence for a GaAs substrate
Spatial resolution with SiO2 microdisks
Spectral dependence for a SiO2 microdisk and discussion
Conclusion
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