Abstract
Abstract Midgap-state densities and profiles in undoped hydrogenated amorphous silicon (a-Si: H), silicon-germanium alloy (a-Si1−x Gex: H) and silicon-carbon alloy (a-Si1−xCx:H) films were obtained from a heterojunction-monitored capacitance method. These midgap states were found to correspond to singly-occupied dangling bonds. The density of midgap states increases slowly with the Ge content in the film, while it increases rapidly with the C content. The peak of the midgap-state profile appears clearly in a-Si:H and a-Si1−xGex:H, bit it does not appear clearly in a-Si1−xCx:H.
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