Abstract
Carrier injection in a forward-biased amorphous silicon Schottky diode is used to modulate the sample absorption coefficient. The measured modulation is interpreted as predominantly due to the elimination of transitions of holes from midgap states to the valence band. The method and conclusions are compared with other techniques sensitive to midgap optical transitions: photoinduced absorption, photocapacitance spectroscopy, and steady-state photoconductivity.
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