Abstract
Colloidal quantum dots have been a spotlight of nanoscience and technology due to their exquisite physical properties that can be harnessed for next generation nanoelectronics and optoelectronics. Particularly, semiconductor quantum dots that are active in the thermal infrared provide a new path for fabricating infrared devices with significantly reduced cost and enable capabilities beyond that offered by conventional semiconductor technologies. In this presentation, we report on recent advances in materials design and device structure for silver selenide mid-infrared quantum dots, building on our recent demonstration of uncooled photoconductive devices. We highlight two key approaches to reduce the high dark current associated with self-doped, intraband quantum dots used in these devices with detailed analyses of the device characteristics.
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