Abstract
For high operating temperature applications, variation of noise equivalent differential temperature (NETD or NEDT) with temperature is the most relevant figure of merit. NETD(T) models with and without taking into account systemic 1/f noise contribution are presented and compared to recent developments made on P on N technology at Sofradir and CEA-LETI. We show that for mature middle wave infrared HgCdTe technology, no 1/f noise contribution up to 220 K is measured and the focal plane array operation is only limited by the mean performance value degradation, not by an increase of defects.
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