Year-end Sale % OFF 
Abstract
Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3-16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M-LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M-LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.
Highlights
In the past half-century, microelectronic technology has greatly promoted the development of information technology, especially for microelectronic devices based on silicon (Si) and III-V group semiconductors
Calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the mid-long wavelength IR (M–LWIR) absorption
We systematically study the optical absorption of the SF6, N2- and NF3-Hyperdoped silicon (hSi) in the wavelength of 0.3–16.7 μm
Summary
In the past half-century, microelectronic technology has greatly promoted the development of information technology, especially for microelectronic devices based on silicon (Si) and III-V group semiconductors. The bandgap of Si (1.12 eV) limits its application, especially for the infrared (IR) optoelectronic integration devices To meet this challenge, various methods have been developed to modify the intrinsic band structure of Si via the intentional introduction of defects [1,2,3,4]. Considering the broad wavelength range in IR, the complete picture of the optical absorption mechanism for IR is not so clear It has been confirmed there is an upper bound in mid-wavelength infrared (MWIR) for the impurity level-to-band absorption [24,25,26,27], so the strong absorption in longer wavelengths could not be explained by the IBs induced by supersaturated dopants. The CPA calculations implemented in the nano-electronic device simulator (NANODSIM) package based on disordered doping structure reveals the origin of free carrier absorption, which should be one of the most important factors for the M–LWIR absorption
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
