Abstract
This paper reported an alkali-earth involved Ga2O3–Al2O3 (GA) glass system with high Tg (646°C) value, excellent anti-crystallization stability (ΔT=160°C) and lower main phonon energy (663cm−1). Compared with other oxide glass system, GA performs very high Er2O3 doping ability (10mol%). GA glass possessed large branching ratio (19.42%) along with the high emission cross section (14.9×10−21cm2) of the Er:4I11/2→4I13/2 transition, it shows that this new GA glass system can be a good alternative for Er3+:2.7μm laser glass.
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