Abstract

We report on the first characterization of orientation-patterned gallium phosphide (OP-GaP) crystals used to generate narrow-linewidth, coherent mid-infrared (MIR) radiation at 5.85 μm by difference frequency generation (DFG) of continuous-wave (cw) Nd:YAG laser at 1064nm and diode-laser at 1301nm. By comparison of the experimental absolute MIR efficiency versus focusing to Gaussian beam DFG theory, we derive an effective nonlinear coefficient for first-order quasi-phase-matched OP-GaP at the generated DFG wavelength. Using d = (2/π)d14 and taking into account Miller’s delta rule, we retrieve an absolute value of the d14 quadratic nonlinear susceptibility coefficient of GaP of d14 = 27.2(3) pm/V at 5.85 μm, in good agreement with the latest absolute measurement of this nonlinear coefficient from non-phase-matched second-harmonic generation (1.32 μm → 0.66 μm) taking into account multiple reflection effects [Shoji et al 1997 J. Opt. Soc. Am. B 14 2268]. The temperature and signal-wave tuning curves are also in qualitative agreement with a recently proposed temperature-dependent Sellmeier equation for OP-GaP when focusing effects are taken into account.

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