Abstract
We demonstrate room-temperature, mid-infrared resonant electroluminescence from GeSn resonant-cavity LEDs with a lateral p-i-n configuration on a silicon-on-insulator substrate. A vertical cavity to enhance light emission in the GeSn active layer is formed by the low-index buried oxide and deposited SiO 2 layer. A planar lateral p-i-n diode structure favorable for CMOS-compatible, dense integration was designed and fabricated for current injection. Under continuous-wave electrical injection, room-temperature resonant electroluminescence was successfully observed at ∼ 1980 nm with a spectral emission factor of 2.2. These results could pave the way toward efficient electrically injected GeSn light emitters operating at room temperature.
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