Mid-infrared reflectance and transmittance characterization of phosphorus and boron diffused silicon solar wafers

Abstract

Characterization of doped silicon layers using infrared spectroscopy is a fast and non-destructive method, but data interpretation requires proper simulation and modelling of the free carrier absorption (FCA) in the mid-infrared wavelength range. This work demonstrates an optical model capable of describing the infrared reflectance and transmittance of silicon solar wafers with pyramidal texture and doped layers. The model's ability to accurately describe a broad variety of samples is discussed.