Abstract
We have numerically investigated the generation of a fourth order stimulated Raman scattering (SRS) signal in a silicon ring cavity. Output power saturation of the silicon Raman laser has been observed. The influences of effective free carrier life, length of ring cavity and coupling ratio on the signal generation are discussed based on our simulation work. Finally, we put forward a double ring cavity scheme to improve the output characteristics of the silicon Raman laser.
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