Abstract
Mid-wave infrared HgCdTe photodiode grown by metal-organic chemical vapor deposition was characterized for its use in avalanche operation. N<sup>+</sup>/N/p/P/P<sup>+</sup>/n<sup>+</sup> heterostructure meets the assumptions of the separated absorption and multiplication design. The p-type absorber, with an assumed Cd molar composition of 0.305, was optimized to operate up to <inline-formula> <tex-math notation="LaTeX">$4.4 ~\mu \text{m}$ </tex-math></inline-formula> at 230 K. The multiplication region is contained within the N layer with a wider energy gap (<inline-formula> <tex-math notation="LaTeX">$\text{x}_{\textit {Cd}}=0.33$ </tex-math></inline-formula>). Satisfactory gain of ~50 was achieved for a moderate reverse bias of −3.5 V and a temperature of 160 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
