Abstract
Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0 degrees to 35 degrees in 5 degrees steps. A fundamental resonance shift of approximately 123 cm-1 (1.4 microm) is observed by varying the doping from 1 x 10(16) to 2 x 10(18) cm(-3). The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.
Highlights
Light incident on arrays of subwavelength holes in metal films has been shown to exhibit transmission exceeding unity when normalized to the unmetallized surface area [1 - 4]
When the sample was cooled, the peak transmission increased but the transmission range increased as well due to the InSb bandgap shifting to higher energy which resulted in the observation of the (1,1) and (2,0) modes
Doping-tunable MIR extraordinary optical transmission (EOT) was demonstrated through a subwavelength metal hole array on InSb
Summary
Light incident on arrays of subwavelength holes in metal films has been shown to exhibit transmission exceeding unity when normalized to the unmetallized surface area [1 - 4]. If the transmission peak resonance can be controlled, EOT based devices can be integrated into infrared photodetectors for enhanced absorption [21] and detection wavelength tunability. Since the dielectric function of the semiconductor is dependent on the plasma frequency (and the material doping), the dielectric function can be altered by control of the semiconductor doping density [3] While this tuning technique is passive, use of voltage control of the carrier concentration could allow for actively tunable plasmonic devices
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