Abstract
Abstract We report the observation of efficient mid-infrared electroluminescence associated with internal transitions of Fe2+ deep levels in overcompensated n-type InP:Fe, ion implanted with Fe doses in the range 10 13 –10 15 cm −2 . Unprecedented high active Fe2+ densities up to ∼10 18 cm −3 are obtained with a combination of high temperature implantation and annealing procedure. The characteristic spectrum of Fe2+, dominated by a set of sharp lines corresponding to the symmetry allowed d-shell transitions, can be observed up to 30 K. A broader emission is detectable up to 200 K. The estimated conversion efficiency of electrical into mid-infrared optical power is ∼5×10−5, a factor of ∼50 larger than previously reported value in MOCVD-grown planar electroluminescent devices.
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