Abstract
We show that heterojunction tunnel structures, as exemplified by the asymmetric spacer layer tunnel (ASPAT) diode, and grown by modern epitaxial techniques, are not yet manufacturable. The growth tolerances required to produced devices to a specified I–V characteristic are too tight. The degree of uniformity is too demanding for maintaining the characteristics within an acceptable spread for viable commercial manufacture. The methods of routine characterisation of as-grown epilayers are inadequate.
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