Abstract
The EM power-transmission coefficients of thin films placed in the transverse plane of a rectangular waveguide are shown to be singularly dependent upon the product σd (thin-film conductivity times film thickness). An error analysis justifies the simplification of the theoretical expression for the power-transmission coefficient to the form T= | 2/[2+(ωμ0/ | γ0|)σd] |2. Excellent agreement is obtained with experimental data taken from metal, semimetal, and semiconductor films.
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